5秒后页面跳转
2SD1115 PDF预览

2SD1115

更新时间: 2024-11-24 04:26:11
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
4页 33K
描述
Silicon NPN Triple Diffused

2SD1115 数据手册

 浏览型号2SD1115的Datasheet PDF文件第2页浏览型号2SD1115的Datasheet PDF文件第3页浏览型号2SD1115的Datasheet PDF文件第4页 
2SD1115(K)  
Silicon NPN Triple Diffused  
Application  
High voltage switching, igniter  
Outline  
TO-220AB  
2
1
1. Base  
2. Collector  
(Flange)  
3. Emitter  
1
4.5 k  
(Typ)  
250 Ω  
(Typ)  
2
3
3
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
400  
300  
V
7
V
3
A
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
Note: 1. Value at TC = 25°C.  
IC(peak)  
PC*1  
Tj  
6
A
40  
W
°C  
°C  
150  
Tstg  
–55 to +150  

与2SD1115相关器件

型号 品牌 获取价格 描述 数据表
2SD1115(K) HITACHI

获取价格

POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
2SD1115K ISC

获取价格

Silicon NPN Power Transistors
2SD1115K SAVANTIC

获取价格

Silicon NPN Power Transistors
2SD1115K HITACHI

获取价格

Silicon NPN Triple Diffused
2SD1117 ISC

获取价格

isc Silicon NPN Power Transistor
2SD1118 ISC

获取价格

isc Silicon NPN Power Transistor
2SD1118 FUJI

获取价格

TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING
2SD1119 TYSEMI

获取价格

Satisfactory operation performances at high efficiency with the lowvoltage power supply.
2SD1119 PANASONIC

获取价格

Silicon NPN epitaxial planer type(For low-frequency power amplification0
2SD1119 HTSEMI

获取价格

TRANSISTOR (NPN)