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2SD1115 PDF预览

2SD1115

更新时间: 2024-09-16 04:26:11
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
4页 33K
描述
Silicon NPN Triple Diffused

2SD1115 数据手册

 浏览型号2SD1115的Datasheet PDF文件第2页浏览型号2SD1115的Datasheet PDF文件第3页浏览型号2SD1115的Datasheet PDF文件第4页 
2SD1115(K)  
Silicon NPN Triple Diffused  
Application  
High voltage switching, igniter  
Outline  
TO-220AB  
2
1
1. Base  
2. Collector  
(Flange)  
3. Emitter  
1
4.5 k  
(Typ)  
250 Ω  
(Typ)  
2
3
3
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
400  
300  
V
7
V
3
A
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
Note: 1. Value at TC = 25°C.  
IC(peak)  
PC*1  
Tj  
6
A
40  
W
°C  
°C  
150  
Tstg  
–55 to +150  

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