K
2SD1114
Silicon NPN Triple Diffused
High Voltage Switching, Igniter
Absolute Maximum Ratings (Ta = 25°C)
TO-220AB
Item
Symbol Rating Unit
————————————————————–
Collector to base voltage
VCBO
400
V
————————————————————–
Collector to emitter voltage VCEO
————————————————————–
300
V
1. Base
2. Collector
(Flange)
Emitter to base voltage
VEBO
7
V
————————————————————–
3. Emitter
Collector current
IC
6
A
————————————————————–
1
2
Collector peak current
iC(peak) 10
A
3
————————————————————–
2
*1
Collector power dissipation PC
50
W
————————————————————–
1
Junction temperature
Tj
150
°C
————————————————————–
Storage temperature
Tstg
–55 to °C
+150
300 Ω 150 Ω
typ typ
————————————————————–
3
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test condition
———————————————————————————————————————————
Collector to base breakdown voltage
V(BR)CBO 400
—
—
V
IC = 0.1 mA, IE = 0
———————————————————————————————————————————
Collector to emitter sustain voltage
VCEO(sus) 300
—
—
V
IC = 4 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
———————————————————————————————————————————
Emitter to base breakdown voltage
V(BR)EBO
7
—
—
V
IE = 50 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICEO
—
—
100 µA
VCE = 300 V, RBE = ∞
———————————————————————————————————————————
DC current transfer ratio
hFE
500
—
—
VCE = 2 V, IC = 4 A*1
———————————————————————————————————————————
Collector to emitter saturation voltage
VCE(sat)
—
—
1.5
V
IC = 4 A, IB = 40 mA*1
————————————————————————————————
Base to emitter saturation voltage
VBE(sat)
—
—
2.0
V
———————————————————————————————————————————
Turn on time
———————————————————————————————— IB1 = –IB2 = 40 mA
Turn off time toff 23 µs
ton
—
2.0
—
µs
IC = 4 A,
—
—
———————————————————————————————————————————
Note: 1. Pulse Test.
See characteristics curves of 2SD991 K .