是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.92 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 140 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 70 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1113 | HITACHI |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1113 | RENESAS |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1113(K) | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB | |
2SD1113B | RENESAS |
获取价格 |
4A, 50V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1113C | RENESAS |
获取价格 |
4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1113D | RENESAS |
获取价格 |
4A, 50V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1113K | HITACHI |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1113K | RENESAS |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1114(K) | RENESAS |
获取价格 |
6A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2SD1114K | ETC |
获取价格 |