是否Rohs认证: | 符合 | 生命周期: | End Of Life |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 5.48 |
最大集电极电流 (IC): | 0.7 A | 集电极-发射极最大电压: | 50 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 5000 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni) |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1111-AB | ONSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD1111-AQ | ONSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD1112 | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1113 | HITACHI |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1113 | RENESAS |
获取价格 |
Silicon NPN Triple Diffused | |
2SD1113(K) | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB | |
2SD1113B | RENESAS |
获取价格 |
4A, 50V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1113C | RENESAS |
获取价格 |
4 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1113D | RENESAS |
获取价格 |
4A, 50V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SD1113K | HITACHI |
获取价格 |
Silicon NPN Triple Diffused |