Datasheet > 2SD1006-L-HF

2SD1006-L-HF

更新时间： 2024-10-15 01:07:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1240K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1006-L-HF 数据手册

SMD Type

Transistors

NPN Transistors

2SD1006-HF

1.70 0.1

Features

High collector to emitter voltage: VCEO 100V.

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

V^CBO

V^CEO

V^EBO

I^C

100

Collector-emitter voltage

Emitter-base voltage

100

Collector current

0.7

Collector current (pulse) *

Collector l power dissipation

Junction temperature

I^C(pu)

P^c

1.2

T^j

150

Storage temperature

Tstg

-55 to +150

*. PW 10ms,duty cycle 50%

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

100

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic=1 mA， I = 0

= 100μA， I = 0

CB= 100 V , I = 0

^EB= 5V , I =0

E= 0

CBO

EBO

0.1

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

Base - emitter voltage *

CE(sat)

BE(sat)

=500 mA, I

=50mA

0.6

=500 mA, I

1.5

^CE= 10V, I

C= 10mA

0.55

0.68

CE= 1V, I

= 5mA

200

DC current gain

hFE

C= 100mA

400

Collector output capacitance

Transition frequency

CB= 10V, I

^CE= 10V, I

=0,f=1MHz

= 10mA

MHz

*. PW 350us ,duty cycle

hFE Classification(2)

Type

Range

Marking

2SD1006-M-HF 2SD1006-L-HF 2SD1006-K-HF

90-180 135-270 200-400

HM HL HK

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与2SD1006-L-HF相关器件

型号	品牌	获取价格	描述	数据表
2SD1006-M	KEXIN	获取价格	NPN Transistors
2SD1006-M-HF	KEXIN	获取价格	NPN Transistors
2SD1006-T1	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, POWER,
2SD1006-T1HK	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, POWER,
2SD1006-T1HL	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, POWER,
2SD1006-T1HM	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, POWER,
2SD1006-T2	NEC	获取价格	700mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
2SD1006-T2HK	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, POWER,
2SD1007	TYSEMI	获取价格	High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
2SD1007	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD