Datasheet > 2SD1006

2SD1006

更新时间： 2024-11-24 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管放大器
页数	文件大小	规格书
1页	137K
描述
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V

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数据手册

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2SD1006 数据手册

SSSMMMDDD TTTyyypppeee

TTr

raanns

tIooCrrss

Product specification

2SD1006

Features

High collector to emitter voltage: V^CEO100V.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

100

Collector current

0.7

Collector current (pulse) *

Collector l power dissipation

Junction temperature

I^C(pu)

P^c

1.2

T^j

150

Storage temperature

T^stg

-55 to +150

*. PW 10ms,duty cycle 50%

Electrical Characteristics Ta = 25

Parameter

Base-emitter voltage *

Collector cutoff current

Emitter cutoff current

Symbol

V^BE

Testconditons

Min

550

Typ

620

Max

650

100

Unit

V^CE=10V , I^C= 10mA

I^CBO

V^CB= 100V, I^E=0

V^EB= 5V, I^C=0

I^EBO

V^CE=1V , I^C= 5.0mA

V^CE=1V , I^C= 100mA

200

0.3

0.9

DC current gain *

h^FE

400

0.6

1.5

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Output capacitance

V^CE(sat)I^C= 500mA , I^B= 50mA

V^BE(sat)I^C= 500mA , I^B= 50mA

C^ob

f^T

V^CB= 10V , I^E= 0 , f = 1.0MHz

V^CE= 10V , I^E= -10mA

Transition product

MHz

*. PW 350ìs,duty cycle 2%

hFE Classification

Marking

hFE

200 400

90 180

135 270

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