Datasheet > 2SD1005-V

2SD1005-V

更新时间： 2024-10-15 01:07:11

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科信 - KEXIN		/
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描述
NPN Transistors

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数据手册

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2SD1005-V 数据手册

SMD Type

Transistors

NPN

ansistors

2SD1005

1.70 0.1

Features

World standard miniature package: SOT-89.

High collector to base voltage: VCBO 100V.

0.42 0.1

0.46 0.1

Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

100

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse) *

Total power dissipation

at 25 ambient temperature *

Junction temperature

Storage temperature

I^C

1.5

P^T

T^j

150

Tstg

-55 to +150

*1. PW 10ms,duty cycle

50%

*2. When mounted on ceramic substrate of 16cm²X 0.7mm

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

100

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic=1 mA， I = 0

= 100μA， I = 0

CB= 100 V , I = 0

^EB= 5V , I =0

E= 0

CBO

EBO

0.1

0.5

1.5

0.7

400

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

Base - emitter voltage *

CE(sat)

BE(sat)

=500 mA, I

=50mA

=500 mA, I

^CE= 10V, I

C= 10mA

0.6

CE= 2V, I

= 100mA

= 500mA

200

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= 10V, I

^CE= 5 V, I

=0,f=1MHz

=-10mA

160

MHz

*. PW 350us,duty cycle 2%

hFE Classification(1)

Type

Range

Marking

2SD1005-W

90-180

2SD1005-V

135-270

2SD1005-U

200-400

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