Datasheet > 2SC945

2SC945

更新时间： 2023-12-06 20:10:22

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1283K
描述
双极型晶体管

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2SC945 数据手册

2SC945

Silicon Epitaxial Planar Transistor

FEATURES

SOT-23

Min

Dim

Max

3.10

1.50

High voltage and high current.

2.70

Excellent h_FElinearity.

Low noise.

1.10

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

APPLICATIONS

1.80

0.02

Audio frequency amplifier.

0.1 Typical

ORDERING INFORMATION

2.20

2.60

All Dimensions in mm

Type No.

2SC945

Marking

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

100

℃

P_C

200

Junction and Storage Temperature

T_j,T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=0.1mA,I_E=0

I_C=1mA,I_B=0

I_E=0.1mA,I_C=0

V_CB=60V,I_E=0

V_CE=50V,I_B=0

V_EB=5V,I_C=0

0.1

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

0.1

V_CE=6V,I_C=1mA

130

400

DC current gain

h_FE

V_CE=6V,I_C=0.1mA

Collector-emitter saturation voltage

I_C=100mA, I_B=10mA

V_CE(sat)

0.15 0.3

Base-emitter saturation voltage

Base to Emitter Voltage

Transition frequency

I_C=100mA, I_B=10mA

V_CE=6V, I_C=1.0mA

V_BE(sat)

V_BE

f_T

0.86

0.55 0.62 0.65

150

V_CE=6V, I_C=10mA

f=30MHz

MHz

Collector output capacitance

Noise figure

V_CB=10V,I_E=0,f=1MHz

C_ob

3.0

4.0

_CE=6V, I_C=0.1mA

f=1kMHz,R_g=10kΩ

CLASSIFICATION OF h_FE(1)

Rank

Range

130-200

200-400

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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