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2SC945 PDF预览

2SC945

更新时间: 2024-11-23 12:32:43
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 198K
描述
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V

2SC945 数据手册

 浏览型号2SC945的Datasheet PDF文件第2页 
Product specification  
2SC945  
SOT-23  
Unit: mm  
+0.1  
2.9-0.1  
+0.1  
0.4-0.1  
3
Features  
Collector current up to 150mA  
1
2
+0.1  
+0.05  
0.95-0.1  
0.1-0.01  
High hFE linearity  
+0.1  
1.9-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
5
V
V
150  
mA  
mW  
power dissipation  
PC  
200  
Junction temperature  
Tj  
150  
Storage temperature range  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Testconditons  
Min  
Typ Max  
Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V(BR)CBO IC=100 μA, IE=0  
V(BR)CEO IC=1mA , IB=0  
V(BR)EBO IE=100 μA, IC=0  
60  
50  
5
V
V
V
ICBO  
IEBO  
VCB = 60V, IE = 0  
0.1  
0.1  
400  
μA  
μA  
Emitter cutoff current  
VEB = 5.0 V, IC = 0  
VCE = 6.0V, IC =1.0mA  
VCE = 6.0V, IC =0.1mA  
IC=100mA,IB=10mA  
IC=100mA,IB=10mA  
130  
40  
DC current gain  
hFE  
Collector saturation voltage  
Base saturation voltage  
Collector to base capacitance  
Noise figure  
VCE(sat)  
VBE(sat)  
Cob  
0.3  
1.0  
3.0  
V
V
VCB = 10 V, IE = 0 , f = 1 MHz  
pF  
NF  
4
10  
dB  
MHz  
VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ  
Transition frequency  
fT  
VCE=6V,IC=10mA,f =30 MHz  
150  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  

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