Datasheet > 2SC945

2SC945

更新时间： 2024-01-04 09:47:52

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	198K
描述
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V

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技术参数
数据手册

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2SC945 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.63
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2SC945 数据手册

Product specification

2SC945

SOT-23

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

■ Features

● Collector current up to 150mA

+0.1

+0.05

0.95_-0.1

0.1_-0.01

● High hFE linearity

+0.1

1.9_-0.1

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Symbol

VCBO

VCEO

VEBO

Rating

Unit

150

℃

power dissipation

200

Junction temperature

150

Storage temperature range

Tstg

-55 to +150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Testconditons

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

V(BR)CBO IC=100 μA, IE=0

V(BR)CEO IC=1mA , IB=0

V(BR)EBO IE=100 μA, IC=0

ICBO

IEBO

VCB = 60V, IE = 0

0.1

400

μA

Emitter cutoff current

VEB = 5.0 V, IC = 0

VCE = 6.0V, IC =1.0mA

VCE = 6.0V, IC =0.1mA

IC=100mA,IB=10mA

130

DC current gain

hFE

Collector saturation voltage

Base saturation voltage

Collector to base capacitance

Noise figure

VCE(sat)

VBE(sat)

Cob

0.3

1.0

3.0

VCB = 10 V, IE = 0 , f = 1 MHz

MHz

VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ

Transition frequency

VCE=6V,IC=10mA,f =30 MHz

150

4008-318-123

http://www.twtysemi.com

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sales@twtysemi.com

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