Ordering number : ENA1160
2SC6146
SANYO Sem iconductors
DATA S HEET
NPN Triple Diffused Planar Silicon Transistor
2SC6146
Switching Regulator Applications
Features
• High breakdown voltage.
• Ultrahigh-speed switching.
• Wide ASO.
• Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
V
800
800
350
8
CBO
CES
CEO
EBO
V
V
V
I
I
I
1
A
C
Collector Current (Pulse)
Base Current
PW≤300μs, duty cycle≤10%
2
A
CP
B
0.5
1
A
Collector Dissipation
P
W
°C
°C
C
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
V
=400V, I =0A
10
μA
μA
CBO
CB
EB
CE
CE
CE
E
=5V, I =0A
10
EBO
C
h
h
h
1
FE
2
FE
3
FE
=5V, I =0.1A
100
200
C
DC Current Gain
=5V, I =0.5A
10
20
C
=5V, I =1mA
C
Continued on next page.
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O2208CB MS IM TC-00001663 No. A1160-1/4