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2SC6140

更新时间: 2024-10-30 06:16:15
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管
页数 文件大小 规格书
5页 167K
描述
Transistor Silicon NPN Epitaxial Type

2SC6140 技术参数

生命周期:Transferred包装说明:ROHS COMPLIANT, 2-10T1A, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.46最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):140JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SC6140 数据手册

 浏览型号2SC6140的Datasheet PDF文件第2页浏览型号2SC6140的Datasheet PDF文件第3页浏览型号2SC6140的Datasheet PDF文件第4页浏览型号2SC6140的Datasheet PDF文件第5页 
2SC6140  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
2SC6140  
Audio Frequency Amplifier Applications  
単位: mm  
High collector voltage  
: V  
= 160 V  
CEO  
Small collector output capacitance : C = 12pF (typ.)  
ob  
High transition frequency  
: f = 100MHz (typ.)  
T
Complementary to 2SA2220  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
160  
160  
V
V
Collector-emitter voltage  
Emitter-base voltage  
6
V
A
DC  
I
1.5  
C
Collector current  
Pulse  
I
2.5  
A
A
CP  
Base current  
I
0.5  
B
JEDEC  
JEITA  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
1.8  
W
°C  
°C  
C
T
150  
j
T
stg  
55 to 150  
TOSHIBA  
2-10T1A  
Weight: 1.5 g (typ.)  
Note 1: Ensure that the channel temperature does not exceed 150°C  
during use of the device.  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-10-15  

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