2SC6140(TP,F)

更新时间： 2024-10-30 13:02:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
5页	167K
描述
TRANSISTOR,BJT,NPN,160V V(BR)CEO,1.5A I(C),TO-220VAR

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技术参数
数据手册

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2SC6140(TP,F) 技术参数

是否Rohs认证：	符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	140
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.8 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SC6140(TP,F) 数据手册

2SC6140

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6140

○Audio Frequency Amplifier Applications

単位: mm

•

High collector voltage

: V

= 160 V

CEO

Small collector output capacitance : C = 12pF (typ.)

High transition frequency

: f = 100MHz (typ.)

Complementary to 2SA2220

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

160

Collector-emitter voltage

Emitter-base voltage

1.5

Collector current

Pulse

2.5

Base current

0.5

JEDEC

JEITA

⎯

Collector power dissipation

Junction temperature

Storage temperature range

1.8

°C

150

stg

−55 to 150

TOSHIBA

2-10T1A

Weight: 1.5 g (typ.)

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-10-15

12 3 4 5

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