Datasheet > 2SC6136(TPE2)

2SC6136(TPE2)

更新时间： 2024-09-13 21:17:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	185K
描述
TRANSISTOR,BJT,NPN,285V V(BR)CEO,700MA I(C),TO-92

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技术参数
数据手册

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2SC6136(TPE2) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	最大集电极电流 (IC)：	0.7 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SC6136(TPE2) 数据手册

2SC6136

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC6136

○High Voltage Switching Applications

Unit: mm

○Switching Regulator Applications

○DC-DC Converter Applications

•

High speed switching: t = 0.18 μs (typ.) (I = 0.3 A)

f C

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

600

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

285

0.7

Collector current

Pulse

2.0

Base current

0.5

JEDEC

JEITA

TO-92

Collector power dissipation

Junction temperature

Storage temperature range

0.5

°C

SC-43

150

TOSHIBA

2-5F1B

stg

−55 to 150

Weight: 0.21 g (typ.)

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 3: When supplying the high voltage with this product, Toshiba recommends the proper isolation between

terminals in response to the environment.

2009-10-19

12 3 4 5

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