Datasheet > 2SC5886R

2SC5886R

更新时间： 2024-09-27 14:54:55

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	232K
描述
功率三极管

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中文翻译

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数据手册

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2SC5886R 数据手册

2SC5886R-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• High DC Current Gain

• High Speed Switching

• Low Collector Emitter Saturation

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

120

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulesd

I_CM

T_a= 25℃

T_C= 25℃

Power Dissipation

P_D

Junction Temperature

T_j

150

℃

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

℃/W

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance from Junction to Case

R_θJC

6.25

¹⁾Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in a still air.

1 / 5

Dated: 31/08/2023 Rev: 01

12 3 4 5

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