Datasheet > 2SC5886A(TE16L1,Q)

2SC5886A(TE16L1,Q)

更新时间： 2024-09-26 20:08:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	144K
描述
TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252

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技术参数
数据手册

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2SC5886A(TE16L1,Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	5 A
配置：	Single	最小直流电流增益 (hFE)：	400
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SC5886A(TE16L1,Q) 数据手册

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2SC5886A

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5886A

High-Speed Switching Applications

Unit: mm

DC/DC Converter Applications

•

High DC current gain: h = 400 to 1000 (I = 0.5 A)

Low collector-emitter saturation: V

= 0.22 V (max)

CE (sat)

High-speed switching: t = 95 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

120

CBO

100

CEX

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Pulse

Base current

0.5

JEDEC

JEITA

―

Ta = 25°C

Tc = 25°C

Collector power

dissipation

TOSHIBA

2-7J1A

Junction temperature

150

°C

Weight: 0.36 g (typ.)

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2010-02-05

12 3 4 5

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