2SC5817S

更新时间： 2024-01-01 04:40:21

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
5页	197K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SC5817S 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC5817S 数据手册

〈Transistor〉

DEVELOPING

2SC5814，2SC5815，2SC5816，2SC5817

For Low Frequency Amplify Application

Silicon NPN Epitaxial Type

OUTLINE DRAWING

Unit：ｍｍ

DESCRIPTION

2SC5814

2SC5815

2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package

silicon NPN epitaxial type transistor. It is designed for low frequency

voltage amplify application.

2.1

2.5

0.425 1.25 0.425

0.5

1.5

0.5

①

②

③

FEATURE

●Facilitates miniaturization and high-density mounting

●Excellent linearity of DC forward current gain

●Low collecter to emitter saturation voltage

VCE(sat)=0.3V max (@IC=30mA,IB=1.5mA)

JEITA：SC-59

JEITA：SC-70

JEDEC：－

APPLICATION

JEDEC：similar to TO-236

For hybrid IC , small type machine low frequency voltage amplify

application

Electrode connections

①：base

Electrode connections

①：base

②：emitter

③：collecter

2SC5816

③：collecter

2SC5817

1.6

1.2

0.8

0.4

0.8

0.4

①

②

①

③

②

MARKING

③

ＥＲ

JEITA：－

JEDEC：－

JEITA：－

JEDEC：－

TYPE NAME

ｈ^ＦＥIT EM

Electrode connections

①：base

②：emitter

Electrode connections

①：base

②：emitter

③：collecter

MAXIMUM RATINGS (Ta=25℃)

RATINGS

SYMBOL

PARAMETER

UNIT

2SC5814

2SC5815

2SC5816

2SC5817

V_CBO

V_EBO

V_CEO

I _C

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

125

P_C

Collector dissipation

150

125

100

℃

T_j

Junction temperature

Storage temperature

＋125

T_stg

-55～＋125

℃

ISAHAYA ELECTRONICS CORPORATION

12 3 4 5

中文翻译

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与2SC5817S相关器件

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2SC5819_04	TOSHIBA	获取价格	High-Speed Switching Applications
2SC5820	RENESAS	获取价格	Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
2SC5820WU-TL-E	RENESAS	获取价格	2SC5820WU-TL-E
2SC5820WU-TL-H	RENESAS	获取价格	2SC5820WU-TL-H
2SC5823	SANYO	获取价格	Switching Regulator Applications
2SC5823(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,1.5A I(C),TO-252VAR
2SC5824	ROHM	获取价格	Power transistor (60V, 3A)
2SC5824	BL Galaxy Electrical	获取价格	60V,3A,General Purpose NPN Bipolar Transistor