Datasheet > 2SC5507(NE661M04)

2SC5507(NE661M04)

更新时间： 2022-01-19 21:03:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	93K
描述
Discrete

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5507(NE661M04) 数据手册

浏览型号2SC5507(NE661M04)的Datasheet PDF文件第2页

浏览型号2SC5507(NE661M04)的Datasheet PDF文件第3页

浏览型号2SC5507(NE661M04)的Datasheet PDF文件第4页

浏览型号2SC5507(NE661M04)的Datasheet PDF文件第5页

浏览型号2SC5507(NE661M04)的Datasheet PDF文件第6页

浏览型号2SC5507(NE661M04)的Datasheet PDF文件第7页

PRELIMINARY DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5507

NPN SILICON RF TRANSISTOR FOR LOW CURRENT,

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

•

Low noise and high gain with low collector current

NF = 1.2 dB, G^a= 16 dB TYP. @f = 2 GHz, V^CE= 2 V, I^C= 2 mA

Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, V^CE= 2 V, I^C= 5 mA

f^T= 25 GHz technology

Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number

Quantity

Packaging Style

2SC5507

Loose product (50 pcs)

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

2SC5507-T2

Taping product (3 kpcs/reel)

Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector to Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

3.3

1.5

°C

tot^Note

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

–65 to +150

Note T^A= +25 °C (free air)

THERMAL RESISTANCE

Item

Symbol

R^{th j-c}

Value

240

Unit

°C/W

Junction to Case Resistance

Junction to Ambient Resistance

R^{th j-a}

650

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13864EJ1V0DS00 (1st edition)

Date Published March 1999 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...12

中文翻译

下载PDF

与2SC5507(NE661M04)相关器件

型号	品牌	描述	获取价格	数据表
2SC5507-A	RENESAS	2SC5507-A	获取价格
2SC5507-FB	RENESAS	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD, M04, 4 PIN	获取价格
2SC5507-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU	获取价格
2SC5507-T2	NEC	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-	获取价格
2SC5507-T2-A	RENESAS	2SC5507-T2-A	获取价格
2SC5507-T2FB	NEC	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU	获取价格