Datasheet > 2SC5504-4

2SC5504-4

更新时间： 2024-11-26 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
6页	51K
描述
TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 30MA I(C) \| SOT-343R

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2SC5504-4 数据手册

Ordering number:ENN6223

NPN Epitaxial Planar Silicon Transistor

2SC5504

UHF to S Band Low-Noise

Amplifier Applications

Features

Package Dimensions

unit:mm

· Low noise : NF=0.9dB typ (f=1GHz).

: NF=1.4dB typ (f=1.5GHz).

· High gain : S21e ²=11dB typ (f=1GHz).

2161

[2SC5504]

· High cutoff frequency : f =11GHz typ.

· Low voltage, low current operation.

0.65 0.65

0.15

(V =1V, I =1mA)

0.3

: f =7GHz typ.

S21e ²=6dB typ (f=1.5GHz).

0 to 0.1

0.6

0.65 0.5

2.0

1 : Emitter

2 : Collector

3 : Emitter

4 : Base

SANYO : MCP4

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

1.5

EBO

˚C

Mounted on a ceramic board (250mm²× 0.8mm)

300

Collector Dissipation

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=10V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=1V, I =0

EBO

=5V, I =10mA

=1V, I =1mA

=10V, f=1MHz

90*

270*

f 1

f 2

GHz

Gain-Bandwidth Product

0.45

0.25

Output Capacitance

Cob

0.7

Reverse Transfer Capacitance

Cre

=10V, f=1MHz

* : The 2SC5504 is classified by 10mA h as follows :

Continued on next page.

Marking

Rank

90 to 180

135 to 270

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1899TS (KOTO) TA-1703 No.6223–1/6

12 3 4 5 6

中文翻译

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与2SC5504-4相关器件

型号	品牌	获取价格	描述	数据表
2SC5504-5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 30MA I(C) \| SOT-343R
2SC5505	PANASONIC	获取价格	Silicon NPN epitaxial planar type
2SC5506	SANYO	获取价格	Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
2SC5507	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
2SC5507	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD PACKAGE-4
2SC5507(NE661M04)	NEC	获取价格	Discrete
2SC5507-A	RENESAS	获取价格	2SC5507-A
2SC5507-FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD, M04, 4 PIN
2SC5507-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
2SC5507-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-

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