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2SC5501 PDF预览

2SC5501

更新时间: 2024-11-26 22:52:47
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管光电二极管
页数 文件大小 规格书
6页 48K
描述
VHF to UHF Low-Noise Wide-Band Amplifier Applications

2SC5501 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.72
Is Samacsys:N其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.07 A
基于收集器的最大容量:1.2 pF集电极-发射极最大电压:10 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz
Base Number Matches:1

2SC5501 数据手册

 浏览型号2SC5501的Datasheet PDF文件第2页浏览型号2SC5501的Datasheet PDF文件第3页浏览型号2SC5501的Datasheet PDF文件第4页浏览型号2SC5501的Datasheet PDF文件第5页浏览型号2SC5501的Datasheet PDF文件第6页 
Ordering number:ENN6221  
NPN Epitaxial Planar Silicon Transistor  
2SC5501  
VHF to UHF Low-Noise Wide-Band  
Amplifier Applications  
Features  
Package Dimensions  
unit:mm  
· Low noise : NF=1.0dB typ (f=1GHz).  
· High gain : S21e 2=13dB typ (f=1GHz).  
· High cutoff frequency : f =7GHz typ.  
· Large allowable collector dissipation :  
2161  
T
[2SC5501]  
P =500mW max.  
C
0.65 0.65  
0.15  
0.3  
3
4
0 to 0.1  
2
1
0.6  
0.65 0.5  
2.0  
1 : Emitter  
2 : Collector  
3 : Emitter  
4 : Base  
SANYO : MCP4  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
20  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
10  
V
CEO  
V
2
70  
V
EBO  
I
mA  
mW  
˚C  
˚C  
C
Mounted on a ceramic board (250mm2× 0.8mm)  
500  
Collector Dissipation  
P
C
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
V
V
V
=10V, I =0  
E
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
CB  
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
10  
EBO  
C
h
=5V, I =20mA  
C
=5V, I =20mA  
C
90*  
270*  
FE  
f
Gain-Bandwidth Product  
Output Capacitance  
5
7
GHz  
pF  
T
Cob  
Cre  
=10V, f=1MHz  
0.75  
0.4  
1.2  
Reverse Transfer Capacitance  
=10V, f=1MHz  
pF  
* : The 2SC5501 is classified by 20mA h as follows :  
Continued on next page.  
FE  
Marking  
Rank  
LN  
4
5
h
90 to 180  
135 to 270  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O1899TS (KOTO) TA-1710 No.6221–1/6  

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