2SC5354

更新时间： 2024-11-30 07:31:11

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
3页	454K
描述
NPN Plastic-Encapsulate Transistor

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中文翻译

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数据手册

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2SC5354 数据手册

2SC5354

NPN Plastic-Encapsulate Transistor

P b

Lead(Pb)-Free

FEATURES

* Excellent hFE Linearity

* Low Noise

1. BASE

2. EMITTER

3. COLLECTOR

SOT-23

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Base Current -Continuous

Collector Power Dissipation

Junction Temperature

150

I_b

P_C

0.2

T_J

150

-55-150

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V_(BR)CBO

I_C=100μA, I_E=0

V_(BR)CEOI_C= 10mA, I_B=0

I_E= 10μA, I

V_(BR)EBO

I_CBO

_C=0

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_CB=60V, I_E=0

μA

0.1

700

I_EBO

V_EB=5V, I_C=0

h_FE(1)

V_CE(sat)

f_T

V_CE=6V, I_C= 2mA

IC=100mA,IB=10mA

DC current gain

Collector-emitter saturation voltage

Transition frequency

0.1

0.25

MHz

_CE=10V, I_C= 1mA

VCB=10V,IE=0,f=1MHz

=6V, I_C= 0.1mA,

C_ob

Collector output capacitance

Noise figure

3.5

V_CE

f=1KHZ,Rg=10KΩ

CLASSIFICATION OF hFE

Rank

120 - 240

70 - 140

200 - 400

Range

300 - 700

WEITRON

http://www.weitron.com.tw

04-Oct-2010

1/3

12 3

中文翻译

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