Datasheet > 2SC5345

2SC5345

更新时间： 2024-09-13 07:31:11

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	490K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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2SC5345 数据手册

2SC5345

TRANSISTOR (NPN)

FEATURES

SOT-23

RF amplifier

High current transition frequency fT=550MHz(Typ.),

[V^CE=6V, I^E=-1mA]

1. ^BASE

2. ^EMITTER

3. ^COLLECTOR

Low output capacitance :

C^ob=1.4pF(Typ.) [V^CB=6V, I^E=0]

Low base time constant and high gain

Excellent noise response

Marking: 5345

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

℃

P_C

Collector Power dissipation

Junction Temperature

Storage Temperature

300

150

-55-150

T_J

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

I_C=10μA, I_E=0

I_C=5mA, I_B=0

I_E=10μA, I_C=0

V_CB=30V, I_E=0

V_EB=4V, I_C=0

V_CE=6V, I_C=1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

0.5

240

0.3

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

I_C=10mA, I_B=1mA

V_CE=6V, I_C=1mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

550

1.4

MHz

V_CB=6V, I_E=0, f=1MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

40-80

70-140

120-240

Range

JinYu

semiconductor

www.htsemi.com

中文翻译

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与2SC5345相关器件

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2SC5345E	KODENSHI	获取价格	RF amplifier
2SC5345EF	KODENSHI	获取价格	RF amplifier
2SC5345EF	AUK	获取价格	NPN Silicon Transistor
2SC5345EF-O	KODENSHI	获取价格	Small Signal Bipolar Transistor, 0.02A I(C), NPN,
2SC5345EF-R	KODENSHI	获取价格	SMALL SIGNAL TRANSISTOR
2SC5345EF-Y	KODENSHI	获取价格	Small Signal Bipolar Transistor, 0.02A I(C), NPN,
2SC5345M	KODENSHI	获取价格	RF amplifier
2SC5345N	AUK	获取价格	NPN Silicon Transistor
2SC5345NO	KODENSHI	获取价格	Transistor,
2SC5345NR	KODENSHI	获取价格	Transistor,