2SC5344S
NPN Silicon Transistor
Description
• Audio power amplifier application
PIN Connection
Features
• High hFE : hFE=100~320
• Complementary pair with 2SA1981S
C
B
Ordering Information
E
Type No.
Marking
Package Code
SOT-23
FA □ □
2SC5344S
SOT-23
① ②
③
①Device Code ② hFE Rank ③ Year&Week Code
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Ratings
35
Unit
Collector-Base voltage
V
V
Collector-Emitter voltage
Emitter-Base voltage
30
5
V
Collector current
800
350
150
mA
mW
°C
Collector dissipation
PC*
Junction temperature
Tj
Storage temperature
Tstg
-55~150
°C
* Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
(Ta=25°C)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=100μA, IE=0
35
30
5
-
-
V
IC=1mA, IB=0
-
-
V
IE=10μA, IC=0
-
-
V
VCB=35V, IE=0
-
-
0.1
0.1
320
0.5
-
μA
μA
-
Emitter cut-off current
IEBO
VEB=5V, IC=0
-
-
*
DC current gain
VCE=1V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
100
-
-
hFE
Collector-Emitter saturation voltage
Transition frequency
VCE(sat)
fT
-
V
-
120
13
MHz
pF
Collector output capacitance
* : hFE rank / O : 100 ~ 200, Y : 160 ~ 320
Cob
-
-
KSD-T5C036-000
1