Datasheet > 2SC5344O(SOT-23)

2SC5344O(SOT-23)

更新时间： 2023-05-15 00:00:00

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Transistor

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2SC5344O(SOT-23) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SC5344 TRANSISTOR (NPN)

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

Audio power amplifier application

High h_FE: h_FE=100~320

Complementary to 2SA1981

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

800

200

150

-55-150

℃

P_C

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 0.1mA, I_B=0

I_C= 10mA, I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= 0.01mA, I_C=0

V_CB=35V , I_E=0

0.1

320

0.5

μA

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

DC current gain

h_FE

V_CE=1V, I_C= 100mA

I_C= 500mA, I_B=50mA

V_CE=5V, I_C=10mA

V_CB=10V,I_E= 0,f=1MHz

100

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

120

MHz

Collector Output Capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

100-200

FAO

160-320

FAY

Range

Marking

A,May,2011

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