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2SC5343G PDF预览

2SC5343G

更新时间: 2024-11-20 12:57:51
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 208K
描述
150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

2SC5343G 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
风险等级:5.42Is Samacsys:N
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SC5343G 数据手册

 浏览型号2SC5343G的Datasheet PDF文件第2页 
M C C  
2SC5343-O  
2SC5343-Y  
2SC5343-G  
2SC5343-L  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
ꢀꢁ Low Collector Saturation Voltage: VCE(sat)=0.25V(Max.)  
ꢀꢁ Low Output Capacitance: Cob=2.0pF(Typ.)  
ꢀꢁ Complementary Pair With 2SA1980  
ꢀꢁ Marking : C5343  
NPN Silicon  
Transistors  
·
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
TO-92  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
50  
Unit  
V
A
E
60  
V
5.0  
V
B
150  
mA  
mW  
OC  
OC  
PC  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
625  
TJ  
150  
TSTG  
-55 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
(IC=100uAdc, IB=0)  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
Emitter-Base Breakdown Voltage  
(IE=10uAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=60Vdc,IE=0)  
60  
50  
5.0  
---  
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
---  
Vdc  
D
0.1  
0.1  
uAdc  
uAdc  
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, IC=0)  
---  
ON CHARACTERISTICS  
E
hFE  
VCE(sat)  
fT  
Forward Current Transfer ratio*  
70  
---  
80  
---  
---  
---  
700  
0.25  
---  
---  
Vdc  
MHz  
pF  
C
B
(IC=2.0Adc, VCE=6.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=100mAdc, IB=10mAdc)  
Transition Frequency  
(VCE=10Vdc, IC=1.0mAdc)  
Collector Output Capacitance  
(VCB=10Vdc, IE=0, f=1.0MHz)  
Noise Figure  
G
---  
DIMENSIONS  
Cob  
2.0  
3.5  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
NF  
(VCE=6.0Vdc, IC=0.1mAdc,  
f=1.0KHz, Rg=10KĀ)  
---  
---  
10  
dB  
E
G
* hFE rank / O: 70-140, Y:120-240, G:200-400, L:300-700  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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