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2SC5154_04 PDF预览

2SC5154_04

更新时间: 2024-11-27 07:31:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
4页 130K
描述
Power Amplifier Applications

2SC5154_04 数据手册

 浏览型号2SC5154_04的Datasheet PDF文件第2页浏览型号2SC5154_04的Datasheet PDF文件第3页浏览型号2SC5154_04的Datasheet PDF文件第4页 
2SC5154  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC5154  
Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
High transition frequency: f = 100 MHz (typ.)  
T
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
160  
160  
V
V
V
5
DC  
I
1.5  
C
Collector current  
A
Pulse  
I
3.0  
CP  
Base current  
I
0.15  
1.3  
A
B
Collector power dissipation  
Junction temperature  
P
W
°C  
°C  
C
T
150  
j
JEDEC  
JEITA  
Storage temperature range  
T
stg  
50 to 150  
TOSHIBA  
2-8M1A  
Weight: 0.55 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 160 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
1.0  
1.0  
µA  
µA  
V
CBO  
CB  
E
Emitter cut-off current  
= 5 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
V
I
C
= 10 mA, I = 0  
160  
(BR) CEO  
B
h
FE  
DC current gain  
V
CE  
= 5 V, I = 100 mA  
70  
240  
C
(Note)  
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 500 mA, I = 50 mA  
0.75  
100  
25  
1.0  
0.95  
V
V
CE (sat)  
C
B
V
BE  
V
V
V
= 5 V, I = 500 mA  
C
CE  
CE  
CB  
Transition frequency  
f
= 10 V, I = 100 mA  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
C
Note: h classification O: 70 to 140, Y: 120 to 240  
FE  
Marking  
C5154  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Characteristics  
indicator  
1
2004-07-07  

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