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2SC5154-O PDF预览

2SC5154-O

更新时间: 2024-11-27 21:17:43
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
5页 142K
描述
TRANSISTOR 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-8M1A, 3 PIN, BIP General Purpose Power

2SC5154-O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.85
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:1 V
Base Number Matches:1

2SC5154-O 数据手册

 浏览型号2SC5154-O的Datasheet PDF文件第2页浏览型号2SC5154-O的Datasheet PDF文件第3页浏览型号2SC5154-O的Datasheet PDF文件第4页浏览型号2SC5154-O的Datasheet PDF文件第5页 
2SC5154  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC5154  
Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
High transition frequency: f = 100 MHz (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
160  
160  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
DC  
I
1.5  
C
Collector current  
A
Pulse  
I
3.0  
CP  
Base current  
I
0.15  
1.3  
A
B
Collector power dissipation  
Junction temperature  
P
W
°C  
°C  
C
T
150  
j
JEDEC  
JEITA  
Storage temperature range  
T
stg  
50 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-8M1A  
Weight: 0.55 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-10  

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