Datasheet > 2SC5100_01

2SC5100_01

更新时间： 2024-10-14 07:31:07

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	28K
描述
Silicon NPN Triple Diffused Planar Transistor

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数据手册

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2SC5100_01 数据手册

2 S C5 1 0 0

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)

Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

External Dimensions FM100(TO3PF)

Symbol

Ratings

Symbol

I^CBO

Ratings

10max

120min

50min

Unit

µA

Unit

Conditions

±0.2

5.5

±0.2

15.6

±0.2

3.45

V^CBO

VCEO

VEBO

160

V^CB=160V

IEBO

120

V^EB=6V

V(BR)CEO

hFE

I^C=50mA

±0.2

ø3.3

V^CE=4V, IC=3A

I^C=3A, IB=0.3A

V^CE=12V, IE=–0.5A

V^CB=10V, f=1MHz

MHz

VCE(sat)

0.5max

20typ

75(Tc=25°C)

150

°C

1.75

2.15

0.8

COB

200typ

Tstg

h^FERank O(50 to 100), P(70 to 140), Y(90 to 180)

–55 to +150

+0.2

-0.1

1.05

+0.2

±0.1

1.5

±0.1

0.65

-0.1

5.45

1.5

3.35

■Typical Switching Characteristics (Common Emitter)

4.4

Weight : Approx 6.5g

a. Part No.

b. Lot No.

V^CC

(V)

(Ω)

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(A)

I^B2

(A)

ton

(µs)

tstg

(µs)

–5

0.4

–0.4

0.13typ

3.50typ 0.32typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

20mA

I^B=10mA

IC=8A

0.6

Base Current I^B(A)

0.2

0.4

0.8

1.0

0.5

1.0

1.5

Collector-Emitter Voltage V^CE(V)

Base-Emittor Voltage VBE(V)

–

^j-at Characteristics

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

(VCE=4V)

200

125˚C

Typ

100

25˚C

–30˚C

0.5

0.02

0.2

100

Time t(ms)

1000 2000

0.1

0.5

0.1

0.5

Collector Current IC(A)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

Typ

0.5

0.1

Without Heatsink

Natural Cooling

Without Heatsink

3.5

100

150

–0.02

–0.1

–1

Emitter Current IE(A)

–8

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

127

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