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2SC5063

更新时间: 2024-11-06 05:56:51
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
1页 40K
描述
Silicon NPN Triple Diffusion Planar Type

2SC5063 数据手册

  
SMD Type  
Transistors  
Silicon NPN Triple Diffusion Planar Type  
2SC5063  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Features  
High-speed switching  
High collector to base voltage VCBO  
Wide area of safe operation (ASO)  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
Collector to base voltage  
500  
500  
V
Collector to emitter voltage  
400  
V
Emitter to base voltage  
Peak collector current  
Collector current  
7
V
3
1.5  
A
IC  
A
Base current  
IB  
0.5  
A
25  
Collector power dissipation TC=25  
Ta=25  
PC  
W
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
Unit  
ìA  
ìA  
V
VCB = 500V, IE = 0  
VEB = 5V, IC = 0  
100  
100  
Collector to emitter voltage  
VCEO  
IC = 10mA, IB = 0  
VCE = 5V, IC = 0.1A  
VCE = 5V, IC = 0.8A  
IC = 0.8A, IB = 0.16A  
IC = 0.8A, IB = 0.16A  
400  
15  
8
Forward current transfer ratio  
hFE  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat)  
1
V
V
VBE(sat)  
1.5  
fT  
ton  
tstg  
tf  
VCE = 10V, IC = 0.2A, f = 10MHz  
25  
MHz  
IC = 0.8A, IB1 = 0.16A, IB2 = -0.32A,  
VCC = 150V  
0.7  
2
ìs  
Storage time  
Fall time  
0.3  
1
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