2SC5053T100QR

更新时间： 2024-11-21 13:04:19

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	84K
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2SC5053T100QR 数据手册

2SC5053

Transistors

Medium power transistor (50V, 1A)

2SC5053

zFeatures

zDimensions (Unit : mm)

1) Low saturation voltage, typically V_CE(sat)=0.12V at I_C/

I_B=500mA/50mA

MPT3

2) P_C=2W (on 40×40×0.7mm ceramic board)

3) Complements the 2SA1900

(1)Base

(2)Collector

(3)Emitter

z Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter- base voltage

Collector current

A (Pulse) ∗1

0.5

Collector power dissipation

150

°C

∗2

Collector power dissipation

Storage temperature

stg

−55 to +150

∗1 Single pulse Pw=100ms

∗2 When mounted on a 40⁺40⁺0.7mm seramic board.

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BVCBO

BVCEO

−

150

−

0.1

0.4

390

−

=50µA

=1mA

=50µA

CB=40V

EB=4V

BVEBO

CBO

EBO

CE(sat)

−

120

−

µA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

=500mA/50mA

=3V/0.5A

CE=5V , I =−50mA , f=100MHz

CB=10V , I =0A , f=1MHz

−

MHz

CE/IC

Transition frequency

Output capacitance

Cob

−

zPackaging specifications and hFE

Type

Package

h_FE

2SC5053

MPT3

∗

Marking

Code

T100

1000

Basic ordering unit (pleces)

∗ Denotes

hFE

Rev.D

1/2

12 3

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