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2SC5053T100/PQ PDF预览

2SC5053T100/PQ

更新时间: 2024-11-21 21:18:39
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
3页 98K
描述
1A, 50V, NPN, Si, POWER TRANSISTOR

2SC5053T100/PQ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
风险等级:5.84外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):82
JESD-30 代码:R-PSSO-F3JESD-609代码:e2
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN COPPER端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.4 V
Base Number Matches:1

2SC5053T100/PQ 数据手册

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与2SC5053T100/PQ相关器件

型号 品牌 获取价格 描述 数据表
2SC5053T100/Q ROHM

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1A, 50V, NPN, Si, POWER TRANSISTOR
2SC5053T100P ROHM

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Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC5053T100PQ ROHM

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Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC5053T100Q ROHM

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Medium power transistor (50V, 1A)
2SC5053T100QR ROHM

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暂无描述
2SC5053T100R ROHM

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Medium power transistor (50V, 1A)
2SC5053T101 ROHM

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Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC5053T101/P ROHM

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Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC5053T101/PQ ROHM

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Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SC5053T101/R ROHM

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Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon