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2SC5053T100PQ PDF预览

2SC5053T100PQ

更新时间: 2024-02-23 16:51:06
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 84K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

2SC5053T100PQ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:8.59Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSSO-F3
JESD-609代码:e2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN功耗环境最大值:2 W
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN COPPER端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.4 V
Base Number Matches:1

2SC5053T100PQ 数据手册

 浏览型号2SC5053T100PQ的Datasheet PDF文件第2页浏览型号2SC5053T100PQ的Datasheet PDF文件第3页 
2SC5053  
Transistors  
Medium power transistor (50V, 1A)  
2SC5053  
zFeatures  
zDimensions (Unit : mm)  
1) Low saturation voltage, typically VCE(sat)=0.12V at IC/  
IB=500mA/50mA  
MPT3  
2) PC=2W (on 40×40×0.7mm ceramic board)  
3) Complements the 2SA1900  
(1)Base  
(2)Collector  
(3)Emitter  
z Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
60  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter- base voltage  
50  
V
5
V
1
A
Collector current  
IC  
2
A (Pulse) 1  
0.5  
W
Collector power dissipation  
PC  
2
150  
W
°C  
°C  
2  
Collector power dissipation  
Storage temperature  
tj  
t
stg  
55 to +150  
1 Single pulse Pw=100ms  
2 When mounted on a 40+ 40+ 0.7mm seramic board.  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
60  
50  
5
150  
15  
0.1  
0.1  
0.4  
390  
V
V
I
I
I
C
C
=50µA  
=1mA  
V
E
=50µA  
CB=40V  
EB=4V  
BVEBO  
I
CBO  
EBO  
CE(sat)  
FE  
120  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
I
C
/I  
B
=500mA/50mA  
=3V/0.5A  
CE=5V , I =50mA , f=100MHz  
CB=10V , I =0A , f=1MHz  
V
h
MHz  
pF  
V
V
V
CE/IC  
f
T
Transition frequency  
E
Output capacitance  
Cob  
E
zPackaging specifications and hFE  
Type  
Package  
hFE  
2SC5053  
MPT3  
QR  
CG  
Marking  
Code  
T100  
1000  
Basic ordering unit (pleces)  
Denotes  
hFE  
Rev.D  
1/2  

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