生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.5 | 最大集电极电流 (IC): | 0.8 A |
配置: | Single | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PSIP-T3 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC5052Y | ETC | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 800MA I(C) | SC-71 |
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2SC5053 | KEXIN | Medium Power Transistor |
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2SC5053 | TYSEMI | Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. |
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2SC5053 | ROHM | Medium Power Transistor (-50V, -1A) |
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2SC5053_REV2008 | ROHM | Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA |
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2SC5053P | ROHM | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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