Datasheet > 2SC5030_04

2SC5030_04

更新时间： 2024-10-28 07:31:07

品牌	Logo	应用领域
东芝 - TOSHIBA		闪光灯
页数	文件大小	规格书
5页	141K
描述
Strobe Flash Applications

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中文翻译

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数据手册

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2SC5030_04 数据手册

2SC5030

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5030

Strobe Flash Applications

Unit: mm

Medium Power Amplifier Applications

•

High DC current gain: h

: h

= 800 to 3200 (V

= 2 V, I = 0.5 A)

CE C

FE (1)

FE (2)

= 250 (min) (V

= 2 V, I = 4 A)

Low saturation voltage: V = 0.5 V (max)

(I = 4 A, I = 40 mA)

CE (sat)

High collector power dissipation: P = 1.3 W

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

CBO

CES

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

JEDEC

JEITA

―

Collector current

Pulse

(Note)

TOSHIBA

2-8M1A

Base current

0.5

1.3

Weight: 0.55 g (typ.)

Collector power dissipation

Junction temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)

Electrical Characteristics

(Ta = 25°C)

Characteristics

Symbol

Test Condition

= 50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

100

―

CBO

Emitter cut-off current

= 8 V, I = 0

EBO

Collector-emitter breakdown voltage

= 10 mA, I = 0

800

250

―

(BR) CEO

= 2 V, I = 0.5 A

―

3200

―

FE (1)

DC current gain

= 2 V, I = 4 A

―

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= 4 A, I = 40 mA

―

0.5

1.2

―

CE (sat)

= 2 V, I = 4 A

―

Transition frequency

= 2 V, I = 0.5 A

―

150

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

―

2004-07-26

12 3 4 5

中文翻译

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