5秒后页面跳转
2SC5029O PDF预览

2SC5029O

更新时间: 2024-10-28 21:13:19
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
5页 140K
描述
TRANSISTOR 3 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Purpose Power

2SC5029O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.85
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SC5029O 数据手册

 浏览型号2SC5029O的Datasheet PDF文件第2页浏览型号2SC5029O的Datasheet PDF文件第3页浏览型号2SC5029O的Datasheet PDF文件第4页浏览型号2SC5029O的Datasheet PDF文件第5页 
2SC5029  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SC5029  
Industrial Applications  
Unit: mm  
Power Amplifier Applications  
Power Switching Applications  
Low saturation voltage: V  
= 0.5 V (max) (I = 1 A, I = 0.05 A)  
CE (sat) C B  
High collector power dissipation: P = 1.3 W  
C
High-speed switching: t  
= 1.0 μs (typ.)  
stg  
Complementary to 2SA1892  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
3
A
C
Base current  
I
0.2  
1.3  
150  
A
B
JEDEC  
JEITA  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
W
°C  
°C  
C
T
j
TOSHIBA  
2-8M1A  
T
stg  
55 to 150  
Weight: 0.55 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-10  

与2SC5029O相关器件

型号 品牌 获取价格 描述 数据表
2SC5029-O TOSHIBA

获取价格

TRANSISTOR 3 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Pur
2SC5029Y TOSHIBA

获取价格

TRANSISTOR 3 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Pur
2SC5029-Y TOSHIBA

获取价格

TRANSISTOR 3 A, 50 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-8M1A, 3 PIN, BIP General Pur
2SC503 ETC

获取价格

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 600MA I(C) | TO-39
2SC5030 TOSHIBA

获取价格

NPN EPITAXIAL TYPE (STOROBE FLASH, MUDIUM POWER AMPLIFIER APPLICATIONS)
2SC5030_04 TOSHIBA

获取价格

Strobe Flash Applications
2SC5032 PANASONIC

获取价格

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC5034 PANASONIC

获取价格

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC5035 PANASONIC

获取价格

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC5036 PANASONIC

获取价格

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)