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2SC4979 PDF预览

2SC4979

更新时间: 2024-01-06 09:47:47
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体开关晶体管
页数 文件大小 规格书
8页 380K
描述
Switching Power Transistor(5A NPN)

2SC4979 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:EPACK-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.89其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
功耗环境最大值:10 W最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
最大关闭时间(toff):1700 ns最大开启时间(吨):300 ns
VCEsat-Max:0.3 VBase Number Matches:1

2SC4979 数据手册

 浏览型号2SC4979的Datasheet PDF文件第2页浏览型号2SC4979的Datasheet PDF文件第3页浏览型号2SC4979的Datasheet PDF文件第4页浏览型号2SC4979的Datasheet PDF文件第5页浏览型号2SC4979的Datasheet PDF文件第6页浏览型号2SC4979的Datasheet PDF文件第7页 
SHINDENGEN  
Switching Power Transistor  
HSV Series  
OUTLINE DIMENSIONS  
Case : E-pack  
2SC4979  
Unit : mm  
(TE5S8)  
5A NPN  
RATINGS  
Absolute Maximum Ratings  
Item  
Symbol  
Conditions  
Ratings  
Unit  
Storage Temperature  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
IC  
-55~150  
V
V
V
Junction Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current DC  
150  
100  
80  
7
5
A
Collector Current Peak  
Base Current DC  
ICP  
IB  
10  
1.5  
A
A
Base Current Peak  
IBP  
PT  
2
A
Total Transistor Dissipation  
Tc = 25  
10  
W
Electrical Characteristics (Tc=25)  
Item  
Symbol  
Conditions  
IC = 0.05A  
Ratings  
Min 80  
Unit  
V
Collector to Emitter Sustaining Voltage  
Collector Cutoff Current  
VCEO(sus)  
ICBO  
At rated Voltage  
Max 0.1  
Max 0.1  
Max 0.1  
Min 70  
mA  
ICEO  
Emitter Cutoff Current  
DC Current Gain  
IEBO  
At rated Voltage  
VCE = 2V, IC = 2.5A  
IC = 2.5A  
mA  
hFE  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Thermal Resistance  
VCE(sat)  
VBE(sat)  
θjc  
Max 0.3  
Max 1.2  
Max 12.5 /W  
TYP 50  
Max 0.3  
V
V
IB = 0.13A  
Junction to case  
VCE = 10V, IC = 0.5A  
Transition Frequency  
fT  
ton  
MHz  
Turn on Time  
IC = 2.5A  
Storage Time  
Fall Time  
ts  
tf  
IB1 = 0.25A, IB2 = 0.25A  
RL = 12Ω, VBB2 = 4V  
Max 1.5  
μs  
Max 0.2  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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