生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.68 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.02 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 70 | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最小功率增益 (Gp): | 17 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 550 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4915-OTE85L | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4915OTE85R | TOSHIBA |
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TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4915R | ETC |
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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SOT-416 | |
2SC4915-R | TOSHIBA |
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High Frequency Amplifier Applications | |
2SC4915R(TE85L) | TOSHIBA |
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TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416 | |
2SC4915R(TE85L,F) | TOSHIBA |
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TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416 | |
2SC4915RTE85L | TOSHIBA |
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TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4915RTE85R | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4915-RTE85R | TOSHIBA |
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TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4915Y | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SOT-416 |