Datasheet > 2SC4881(F)

2SC4881(F)

更新时间： 2024-11-11 20:11:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	135K
描述
TRANSISTOR NPN 50V 5A TO-220

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技术参数
数据手册

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2SC4881(F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	2-10R1A, 3 PIN	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

2SC4881(F) 数据手册

2SC4881

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC4881

High-Current Switching Applications

Unit: mm

•

Low saturation voltage: V

= 0.4 V (max)

CE (sat)

High-speed switching: t

= 0.8 μs (typ.)

stg

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Pulse

2.0

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-10R1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 1.7 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4

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