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2SC4834 PDF预览

2SC4834

更新时间: 2024-01-31 05:28:29
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体开关晶体管
页数 文件大小 规格书
9页 295K
描述
Switching Power Transistor(8A NPN)

2SC4834 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ITO-220, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.82外壳连接:ISOLATED
最大集电极电流 (IC):8 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
湿度敏感等级:2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:NPN功耗环境最大值:45 W
最大功率耗散 (Abs):45 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):13 MHz最大关闭时间(toff):1400 ns
最大开启时间(吨):300 nsVCEsat-Max:1 V
Base Number Matches:1

2SC4834 数据手册

 浏览型号2SC4834的Datasheet PDF文件第2页浏览型号2SC4834的Datasheet PDF文件第3页浏览型号2SC4834的Datasheet PDF文件第4页浏览型号2SC4834的Datasheet PDF文件第5页浏览型号2SC4834的Datasheet PDF文件第6页浏览型号2SC4834的Datasheet PDF文件第7页 
SHINDENGEN  
Switching Power Transistor  
FS Series  
OUTLINE DIMENSIONS  
2SC4834  
Case : ITO-220  
(TP8V40FS)  
Unit : mm  
8A NPN  
RATINGS  
AbsoluteMaximum Ratings  
Item  
StorageTemperature  
Symbol  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
Conditions  
Ratings Unit  
-55~150 ℃  
JunctionTemperature  
150  
500  
400  
7
V
V
CollectortoBaseVoltage  
CollectortoEmitterVoltage  
EmittertoBaseVoltage  
V
CollectorCurrent DC  
I
C
8
A
CollectorCurrent Peak  
BaseCurrent DC  
I
I
B
16  
3
CP  
A
W
Base Current Peak  
I
BP  
6
TotalTransistorDissipation  
PT  
Vdis  
TOR  
Tc = 25℃  
45  
2
0.5  
DielectricStrength  
MountingTorque  
Terminalstocase, AC 1minute  
(Recommendedtorque:0.3Nm)  
kV  
Nm  
●ElectricalCharacteristics(Tc=25℃)  
Item  
CollectortoEmitterSustainingVoltage  
Symbol  
VCEO(sus)  
Conditions  
Ratings Unit  
Min400  
I =0.1A  
C
V
CollectorCutoffCurrent  
AtratedVoltage  
I
Max0.1 mA  
Max0.1  
CBO  
I
CEO  
EmitterCutoffCurrent  
DC CurrentGain  
I
AtratedVoltage  
Max0.1 mA  
10~25  
Min10  
EBO  
hFE  
hFEL  
VCE =2V, I =4A  
C
VCE =2V, I =1mA  
C
CollectortoEmitterSaturationVoltage  
V (sat) I =4A  
Max1.0  
Max1.5  
Max2.78 ℃/W  
TYP 13 MHz  
Max0.3  
V
V
C
CE  
BasetoEmitterSaturationVoltage  
ThermalResistance  
TransitionFrequency  
TurnonTime  
V (sat) I =0.8A  
B
BE  
θjc  
f
Junctiontocase  
VCE =10V, I =0.8A  
C
T
ton  
ts  
I =4A  
C
StorageTime  
I =0.8A, I =1.6A  
B1 B2  
Max1.3 μs  
Max0.1  
FallTime  
tf  
RL =37.5Ω, VBB2 =4V  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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