Datasheet > 2SC4833_15

2SC4833_15

更新时间： 2024-09-26 01:20:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	45K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC4833_15 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SC4833

DESCRIPTION

·With ITO-220 package

·Switching power transistor

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (ITO-220) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

Collector-base voltage

500

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

400

Open collector

I_CM

I_B

Collector current-Peak

Base current

I_BM

P_T

Base current-Peak

Total power dissipation

Junction temperature

Storage temperature

Dielectric strength

Mounting torque

T_C=25℃

℃

N·m

T_j

150

-55~150

T_stg

V_dis

TOR

Terminals to case,AC1 minute

(Recommended torque:0.3N·m)

0.5

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-C}

3.57

℃/W

JMnic

12 3

中文翻译

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