2SC4815-M

更新时间： 2024-02-01 04:31:39

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管功率双极晶体管
页数	文件大小	规格书
6页	167K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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技术参数
数据手册

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2SC4815-M 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	MP-10	包装说明：	,
针数：	3	Reach Compliance Code：	compliant
Factory Lead Time：	1 week	风险等级：	5.66
Base Number Matches：	1

2SC4815-M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SC4815

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SC4815 is a power transistor developed for high-speed switching and features low V^CE(sat)and high h^FE.

This transistor is ideal for use as a driver in DC/DC converters and actuators.

In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost

reduction.

FEATURES

• High h^FEand low V^CE(sat):

V^CE(sat)≤ 0.3 V @I^C= 3.0 A, I^B= 0.15 A

h^FE≥ 100

@V^CE= 2.0 V, I^C= 1.0 A

• Available for auto mount in radial taping specifications

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T

Ratings

Unit

100

7.0

5.0

2.5

Total power dissipation

Junction temperature

1.8

°C

T^j

150

−55 to +150

Storage temperature

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15605EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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