Datasheet > 2SC4618-Q

2SC4618-Q

更新时间： 2024-09-26 01:10:39

品牌	Logo	应用领域
科信 - KEXIN		放大器光电二极管晶体管
页数	文件大小	规格书
2页	1151K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC4618-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SC4618

SOT-523

Unit: m m

1.6 ⁺_-⁰₀^._.¹₁

1.0 ⁺_-⁰₀^._.¹₁

0.2_-⁺⁰₀^._.⁰₀⁵₅

0.15±0.05

■ Features

● High Voltage and Current

● High DC Current Gain

● Small Package

0.3±0.05

+0.1

-0.1

0.5

1. Base

2. Emitter

3. Collecter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

℃/W

150

833

150

RΘJA

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

^CB= 24 V , I

EB= 3V , I

= 0

500

0.3

1.2

270

2.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=10 mA, I

B=1mA

=10 mA, I

B=1mA

hFE

^CE= 6V, I

CB= 6V, I

CE= 6V, I

= 1mA

= 0,f=1MHz

= 1mA,f=100MHz

Collector output capacitance

Transition frequency

150

MHz

■ Classification of hfe

Marking

2SC4618-N

56-120

2SC4618-P

2SC4618-Q

120-270

82-180

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