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2SC4600 PDF预览

2SC4600

更新时间: 2024-01-27 16:27:52
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
2页 49K
描述
NPN Triple Diffused Planar Silicon Transistor

2SC4600 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:500 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
功耗环境最大值:50 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):18 MHz
最大关闭时间(toff):3300 ns最大开启时间(吨):500 ns
VCEsat-Max:1 VBase Number Matches:1

2SC4600 数据手册

 浏览型号2SC4600的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Triple Diffused Planar Silicon Transistor  
2SC4600  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Surface mount type device making the following possible.  
Reduction in the number of manufacturing processes  
for 2SC4600-applied equipment.  
High density surface mount applications.  
Small size of 2SC4600-applied equipment.  
High breakdown voltage, high reliability.  
Fast switching speed.  
+0.1  
1.27  
-0.1  
0.1max  
+0.1  
0.81  
-0.1  
2.54  
Wide ASO.  
1,Base  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2,Collector  
3,Emitter  
Adoption of MBIT process.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
800  
500  
7
Unit  
V
V
V
Collector current ( DC)  
Collector current (Pulse) *  
Base current  
5
A
A
ICP  
10  
IB  
2
1.65  
50  
Collector power dissipation Ta = 25  
TC = 25  
PC  
W
Junction temperature  
Tj  
150  
Storage temperature range  
Tstg  
-55 to +150  
* PW 300ms, duty cycle 10%  
1
www.kexin.com.cn  

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