Datasheet > 2SC4600

2SC4600

更新时间： 2024-11-11 07:31:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
2页	49K
描述
NPN Triple Diffused Planar Silicon Transistor

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中文翻译

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数据手册

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2SC4600 数据手册

SMD Type

Transistors

NPN Triple Diffused Planar Silicon Transistor

2SC4600

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Surface mount type device making the following possible.

Reduction in the number of manufacturing processes

for 2SC4600-applied equipment.

High density surface mount applications.

Small size of 2SC4600-applied equipment.

High breakdown voltage, high reliability.

Fast switching speed.

+0.1

1.27

-0.1

0.1max

+0.1

0.81

-0.1

2.54

Wide ASO.

1,Base

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2,Collector

3,Emitter

Adoption of MBIT process.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

800

500

Unit

Collector current ( DC)

Collector current (Pulse) *

Base current

I^CP

I^B

1.65

Collector power dissipation Ta = 25

T^C= 25

P^C

Junction temperature

T^j

150

Storage temperature range

Tstg

-55 to +150

* PW 300ms, duty cycle 10%

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与2SC4600相关器件

型号	品牌	获取价格	描述	数据表
2SC4600L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 5A I(C) \| TO-252VAR
2SC4600M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 5A I(C) \| TO-252VAR
2SC4600N	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 5A I(C) \| TO-252VAR
2SC4601	SANYO	获取价格	Switching Regulator Applications
2SC4601	KEXIN	获取价格	NPN Triple Diffused Planar Silicon Transistor
2SC4601	TYSEMI	获取价格	Surface mount type device making the following possible. Adoption of MBIT process.
2SC4601K	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 1.5A I(C) \| TO-252VAR
2SC4601L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 1.5A I(C) \| TO-252VAR
2SC4601M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 1.5A I(C) \| TO-252VAR
2SC4602	SANYO	获取价格	Switching Regulator Applications