Datasheet > 2SC4596E

2SC4596E

更新时间： 2024-11-18 22:40:03

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管局域网
页数	文件大小	规格书
1页	72K
描述
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC4596E 数据手册

2SC4596E

SILICON EPITAXIAL PLANNAR TRANSISTOR

GENERAL DESCRIPTION

High frequency, high power NPN transistors in a

plastic envelope, primarily for use in audio and general

purpose

TO-220F

QUICK REFERENCE DATA

SYMBOL

V_CESM

V_CEO

I_C

I_CM

P_tot

V_CEsat

V_BE

t_f

PARAMETER

CONDITIONS

MIN

MAX

100

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Emitter forward voltage

Fall time

T_mb25

I_C= 2A; I_B= 0.2A

I_E= 2A

1.5

0.5

I_C=2A,I_B1=-I_B2=0.2A,V_CC=30V

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

MIN

MAX

100

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Emitter-base oltage (open colloctor)

Collector current (DC)

V_BE= 0V

Base current (DC)

I_B

P_tot

Total power dissipation

Tmb 25

Storage temperature

-55

150

T_stg

T_j

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

0.1

UNIT

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown voltage

Collector-emitter saturation voltages

DC current gain

V_CB=100V

I_CBO

I_EBO

V_(BR)CEO

V_CEsat

h_FE

f_T

C_c

t_on

t_s

t_f

V_EB=5V

0.1

I_C=1mA

I_C=2A; I_B= 0.2A

1.5

I_C=1A; V_CE= 5V

100

120

200

Transition frequency at f = 30MHz

Collector capacitance at f = 1MHz

On times

I_C=0.5A; V_CE= 10V

V_CB= 10V

MHz

IC=2A,IB1=-IB2=0.2A,VCC=30V

0.5

1.5

0.5

Tum-off storage time

Fall time

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

中文翻译

下载PDF

与2SC4596E相关器件

型号	品牌	获取价格	描述	数据表
2SC4596F	ISC	获取价格	Transistor
2SC4596F	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC4597	SANYO	获取价格	Switching Regulator Applications
2SC4597	KEXIN	获取价格	Silicon NPN Triple Diffused Type
2SC4597	TYSEMI	获取价格	Surface mount type device making the following possible. Adoption of MBIT process.
2SC4597L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-252VAR
2SC4597M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-252VAR
2SC4597N	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-252VAR
2SC4598	KEXIN	获取价格	NPN Triple Diffused Planar Silicon Transistor
2SC4598	TYSEMI	获取价格	Surface mount type device making the following possible. Fast switching speed.