Datasheet > 2SC4583

2SC4583

更新时间： 2024-02-07 20:49:20

品牌	Logo	应用领域
新电元 - SHINDENGEN		晶体开关晶体管局域网
页数	文件大小	规格书
10页	439K
描述
Switching Power Transistor(3A NPN)

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中文翻译

获取价格

技术参数
数据手册

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2SC4583 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81

2SC4583 数据手册

SHINDENGEN

Switching Power Transistor

HFX Series

OUTLINE DIMENSIONS

Case : ITO-3P

2SC4583

Unit : mm

(TP3W80HFX)

3A NPN

RATINGS

●Absolute Maximum Ratings

Item

Storage Temperature

Symbol

Tstg

V_CBO

V_CEO

V_EBO

I_C

Conditions

Ratings

-55～150

Unit

℃

Junction Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current DC

150

1200

800

Collector Current Peak

Base Current DC

I_CP

I_B

Base Current Peak

I_BP

Total Transistor Dissipation

Dielectric Strength

P_T

Vdis

TOR

Tc = 25℃

0.8

Terminals to cased, AC 1 minute

(Recommended torque : 0.5N･m)

Mounting Torque

N･m

●Electrical Characteristics (Tc=25℃)

Item

Symbol

Conditions

I_C= 0.1A

Ratings

Min 800

Max 0.1

Min 8

Unit

Collector to Emitter Sustaining Voltage

Collector Cutoff Current

V_CEO(sus)

I_CBO

I_CEO

I_EBO

At rated Voltage

Emitter Cutoff Current

DC Current Gain

At rated Voltage

V_CE= 5V, I_C= 1.5A

V_CE= 5V, I_C= 1mA

I_C= 1.5A

h_FE

h_FEL

V_CE(sat)

V_BE(sat)

θjc

f_T

Min 7

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Thermal Resistance

Max 1.0

Max 1.5

Max 2.5 ℃/W

TYP 8

Max 0.5

Max 3.5

Max 0.3

I_B= 0.3A

Junction to case

V_CE= 10V, I_C= 0.3A

I_C= 1.5A

Transition Frequency

Turn on Time

MHz

ton

Storage Time

I_B1= 0.3A, I_B2= 0.6A

R_L= 167Ω, V_BB2= 4V

μs

Fall Time

12 3 4 5 6 7...10

中文翻译

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