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2SC4577 PDF预览

2SC4577

更新时间: 2024-01-06 09:51:44
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管光电二极管放大器
页数 文件大小 规格书
1页 37K
描述
NPN Epitaxial Planar Silicon Transistor

2SC4577 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
VCEsat-Max:0.3 VBase Number Matches:1

2SC4577 数据手册

  
SMD Type  
Transistors  
NPN Epitaxial Planar Silicon Transistor  
2SC4577  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Low collector-to-emitter saturation voltage.  
Small-sized package.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
20  
15  
V
5
500  
V
mA  
A
Collector current (pulse)  
Collector dissipation  
Icp  
1
PC  
200  
mW  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
Testconditons  
VCB = 15V, IE=0  
Min  
Typ  
Max  
Unit  
ìA  
ICBO  
IEBO  
hFE  
fT  
0.1  
0.1  
600  
VEB = 4V, IC=0  
ìA  
VCE = 2V , IC = 10mA  
VCE = 2V , IC = 50mA  
VCB = 10V , f = 1.0MHz  
IC = 5mA , IB = 0.5mA  
IC = 200mA , IB = 10mA  
135  
Gain bandwidth product  
Output capacitance  
300  
4.0  
MHz  
pF  
mV  
mV  
V
Cob  
15  
30  
300  
1.2  
Collector-emitter saturation voltage  
VCE(sat)  
160  
0.95  
Base-emitter saturation voltage  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
VBE(sat) IC = 200mV , IB = 10mA  
V(BR)CBO IC = 10ìA , IE = 0  
20  
15  
5
V
V(BR)CEO  
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10ìA , IC = 0  
V
hFE Classification  
UT  
6
Marking  
Rank  
5
7
hFE  
135 270  
200 400  
300 600  
1
www.kexin.com.cn  

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