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2SC4562Q PDF预览

2SC4562Q

更新时间: 2024-01-29 21:28:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
3页 48K
描述
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 50MA I(C) | SC-71

2SC4562Q 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.3 VBase Number Matches:1

2SC4562Q 数据手册

 浏览型号2SC4562Q的Datasheet PDF文件第2页浏览型号2SC4562Q的Datasheet PDF文件第3页 
Transistor  
2SC4562  
Silicon NPN epitaxial planer type  
For high-frequency amplification  
Complementary to 2SA1748  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High transition frequency fT.  
Small collector output capacitance Cob.  
1
S-Mini type package, allowing downsizing of the equipment and  
3
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
50  
50  
V
5
50  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking symbol : AM  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
µA  
µA  
V
VCB = 10V, IE = 0  
Collector cutoff current  
ICEO  
VCE = 10V, IB = 0  
100  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
50  
50  
5
I
C = 1mA, IB = 0  
V
IE = 10µA, IC = 0  
V
*
Forward current transfer ratio  
hFE  
VCE = 10V, IC = 2mA  
200  
500  
0.3  
Collector to emitter saturation voltage VCE(sat)  
IC = 10mA, IB = 1mA  
0.06  
250  
1.5  
V
MHz  
pF  
Transition frequency  
fT  
VCB = 10V, IE = –2mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
Collector output capacitance  
Cob  
*hFE Rank classification  
Rank  
hFE  
Q
R
200 ~ 400  
AMQ  
250 ~ 500  
AMR  
Marking Symbol  
1

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