Datasheet > 2SC4541

2SC4541

更新时间： 2024-11-21 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
3页	474K
描述
Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A) Small Flat Package

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2SC4541 数据手册

SMD Type

Product specification

2SC4541

Features

Low Saturation Voltage: V^CE(sat)= 0.5V (max) (I^C= 1.5A)

High Speed Switching Time: t^stg= 0.5ìs(typ.)

Small Flat Package

P^C= 1 to 2W (mounted on ceramic substrate)

Complementary to 2SA1736

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

I^B

0.6

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1000

150

Jumction temperature

Storage temperature Range

T^stg

-55 to +150

* Mounted on a ceramic substrate (250 mm²x 0.8 t)

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector Cut-off Current

Emitter Cut-off Current

ICBO

V^CB= 80V , I^E= 0

V^EB= 6V , I^C= 0

I^EBO

0.1

Collector-Emitter Breakdown Voltage

V(BR)CEO IC = 10mA , IB = 0

120

V^CE= 2V , I^C= 100mA

h^FE

400

DC Current Gain

VCE = 2V , IC = 2A

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

V^CE(sat)I^C= 1.5A , I^B= 75mA

V^BE(sat)I^C= 1.5A , I^B= 75mA

0.5

1.2

f^T

V^CE= 2V , I^C= 100mA

100

MHz

Collector Output Capacitance

C^ob

V^CB= 10V , I^E= 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

0.1

0.5

0.1

See Test Circuit.

ìs

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