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2SC4536-T1QR-A

更新时间： 2024-09-24 14:46:23
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段晶体管
页数 文件大小 规格书
7页 47K
描述
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, POWER, MINIMOLD PACKAGE-3

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2SC4536-T1QR-A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-F3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.25
其他特性：LOW NOISE外壳连接：COLLECTOR
最大集电极电流 (IC)：0.25 A集电极-发射极最大电压：15 V
配置：SINGLE最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-PSSO-F3JESD-609代码：e6
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：FLAT端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SC4536-T1QR-A 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC4536  
NPN EPITAXIAL SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
3-PIN POWER MINIMOLD  
DESCRIPTION  
The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features  
excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it  
employs plastic surface mount type package (SOT-89).  
FEATURES  
•
•
•
•
Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA  
Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz  
Large Ptot : Ptot = 2.0 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)  
Small package : 3-pin power minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC4536  
25 pcs (Non reel)  
1 kpcs/reel  
• 12 mm wide embossed taping  
• Collector face the perforation side of the tape  
2SC4536-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 25 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
30  
15  
V
3.0  
V
250  
mA  
W
P
tot Note  
2.0  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
°C  
°C  
Tstg  
−65 to +150  
Note Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10338EJ01V0DS (1st edition)  
(Previous No. P10369EJ2V1DS00)  
The mark • shows major revised points.  
Date Published May 2003 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 1994, 2003  
1234567

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2SC4536-T1QS NEC

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2SC4536-T1QS-A NEC

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2SC4537IS HITACHI

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 		RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
2SC4537IS-TL HITACHI

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2SC4537IS-TL-E RENESAS

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 		Silicon NPN Epitaxial
2SC4537IS-TR HITACHI

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 		RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili

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