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2SC4536-QS-A

更新时间： 2024-02-27 14:27:02

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号双极晶体管射频小信号双极晶体管微波
页数	文件大小	规格书
8页	61K
描述
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, POWER, MINIMOLD PACKAGE-3

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2SC4536-QS-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.25 A	最小直流电流增益 (hFE)：	100
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	2 W	子类别：	BIP RF Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

2SC4536-QS-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4536

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL

TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC4536 is designed for use in middle power, low distortion low

noise figure RF amplifier. It features excellent linearity and large dynamic

range, which make it suitable for CATV, telecommunication, and other use,

it employs plastic surface mount type package (SOT-89).

(Unit: mm)

4.5±0.1

1.6±0.2

1.5±0.1

FEATURES

•

Low Distortion

IM²= 57.5 dB TYP. @ V^CE= 10 V, I^C= 50 mA

0.42

0.42±0.06

±0.06

IM³= 82 dB TYP.

Low Noise

@ V^CE= 10 V, I^C= 50 mA

1.5

0.47

±0.06

−0.03

3.0

•

0.41

+0.05

NF = 1.5 dB TYP.

@ V^CE= 10 V, I^C= 10 mA, f = 1 GHz

Term, Connection

E : Emitter

Power Mini Mold Package Used.

High Power Dissipation.

C : Collector (Fin)

B : Base

(SOT-89)

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Maximum Voltage and Current (TA = 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

3.0

250

Maximum Power Dissipation

Total Power Dissipation

at 25 C Ambient Temperature P^T*

Maximum Temperatures

2.0

Junction Temperature

T^j

150

Storage Temperature Range

T^stg

65 to +150

* 0.7 mm 16 cm²double sided ceramic substrate. (Copper plating)

Document No. P10369EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1994

12 3 4 5 6 7 8

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