Datasheet > 2SC4519

2SC4519

更新时间： 2024-09-21 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	106K
描述
Adoption of FBET process. Low collector-to-emitter saturation voltage.

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数据手册

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2SC4519 数据手册

SMD Type

Product specification

2SC4519

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Adoption of FBET process.

Low collector-to-emitter saturation voltage.

Fast switching speed.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

Small-sized package.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

500

Collector current (pulse)

Collector dissipation

I^cp

200

Junction temperature

Storage temperature

150

T^stg

-55 to +150

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与2SC4519相关器件

型号	品牌	获取价格	描述	数据表
2SC4519-4	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 500MA I(C) \| SOT-23VAR
2SC4519-5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 500MA I(C) \| SOT-23VAR
2SC4519-6	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 500MA I(C) \| SOT-23VAR
2SC4520	SANYO	获取价格	High-Speed Switching Applications
2SC4520	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SC4520	TYSEMI	获取价格	Adoption of FBET, MBIT process. Low collector-to-emitter saturation voltage.
2SC4520R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1.5A I(C) \| SOT-89
2SC4520S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1.5A I(C) \| SOT-89
2SC4520T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1.5A I(C) \| SOT-89
2SC4521	SANYO	获取价格	High-Speed Switching Applications